From polymers to nanotechnology, ion beams are employed in almost every materials science lab worldwide. Through etching, polishing, and cleaning, ion beams support and facilitate various analysis techniques. While other methods, such as SIMS, ion implantation, and ion lithography, use the beams for fabrication and analysis.
Ionoptika provides individual ion beams and instrumentation ideal for a host of materials science applications. Explore our products and applications below.
3D ToF SIMS data of an OLED device
|GCIB 10S||Characterization of buried interfaces using Ga Kα hard X-ray photoelectron spectroscopy (HAXPES)||BF Spencer, SA Church, P Thompson, DJH Cant, S Maniyarasu, A Theodosiou, AN Jones, MJ Kappers, DJ Binks, RA Oliver, J Higgins, AG Thomas, T Thomson, AG Shard, WR Flavell||Faraday Discussions||2022||XPS, HAXPES|
|Q-One||Single Ion Implantation of Bismuth||N Cassidy, P Blenkinsopp, I Brown, RJ Curry, BN Murdin, R Webb, D Cox||Physica Status Solidi A||2020||Ion Implantation, Quantum Computing, Qubits, Q-One|
|Q-One||Investigating the formation of isotopically pure layers for quantum computers using ion implantation and layer exchange||J England, D Cox, N Cassidy, B Mirkhaydarov, A Perez-Fadon||Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms||2019||Ion Implantation, Quantum Computing, Qubits|
|J105 SIMS||Comparing depth profiling of oxide scale on SOFC interconnect-materials using ToF-SIMS with 69Ga+, Bi3+/Cs+ and C60+/C602+ as primary and sputter ions||J Hall, JS Fletcher, S Canovic, P Malmberg||Materials at High Temperatures||2015||Depth profiling|
|IOG 25||Determination of relative sensitivity factors during secondary ion sputtering of silicate glasses by Au+, Au2+ and Au3+ ions||A King, T Henkel, D Rost, IC Lyon||Rapid Communications in Chemistry||2009||TOF SIMS|
|IOG C60-40||Improvements in quantification accuracy of inorganic time-of-flight secondary ion mass spectrometric analysis of silicate materials by using C60 primary ions||T Henkel, D Rost, IC Lyon||Rapid Communications in Chemistry||2009||TOF SIMS, C60|