Ion implantation is a process whereby dopant ions are accelerated in intense electrical fields to penetrate a material’s surface, thereby changing its properties.
Ion implantation is an essential technique in the semiconductor industry as it is used to modify a semiconductor’s conductivity during the fabrication of integrated circuits. It is also heavily used for fabricating silicon-on-insulator devices.
Emerging applications for ion implantation, such as quantum technology and nanotechnology, require much more extreme tolerances than traditional applications. Ionoptika’s Q-One is the world’s first instrument for the deterministic implantation of single ions with nanometre accuracy.
Explore our applications and products suitable for ion implantation below.
Coincident secondary electron and on-chip signals resulting from implanting single ions into a FET device.
|Q-One||Single Ion Implantation of Bismuth||N Cassidy, P Blenkinsopp, I Brown, RJ Curry, BN Murdin, R Webb, D Cox||Physica Status Solidi A||2020||Ion Implantation, Quantum Computing, Qubits, Q-One|
|Q-One||Investigating the formation of isotopically pure layers for quantum computers using ion implantation and layer exchange||J England, D Cox, N Cassidy, B Mirkhaydarov, A Perez-Fadon||Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms||2019||Ion Implantation, Quantum Computing, Qubits|