Drug detection with high-sensitivity using ToF SIMS
Matt
The high attrition rate of pharmaceutical drug compounds adds enormously to the cost of those that make it to market, so there is an urgent and growing need to identify failure at earlier stages of drug development. In order to do so, researchers require as …
Employee Spotlight: Dr Naoko Sano
The first to be in the spotlight is one of most recent hires, Dr Naoko Sano, our new Applications Scientist. We asked Naoko about her career and what she enjoys about working at Ionoptika. …
RADIATE: Research And Development with Ion Beams – Advancing Technology in Europe
Ionoptika has joined forces with 14 partners from public research and 3 other SMEs for the RADIATE project, exchanging experience and best practice examples in order to structure the European Research Area of ion technology application. Besides further developing Ion Beam technology and strengthening the …
High-resolution molecular imaging ToF SIMS
Historically ToF SIMS has not been sensitive to intact molecules due to the excessive fragmentation caused by the primary Ion Beam. Now however, thanks to the progress in gas cluster Ion Beam (GCIB) technology over the last decade, sensitivity to intact molecular species in ToF …
Detecting pollutants in a Cherry Blossom leaf
Plant samples such as leaves are a challenging sample for ToF SIMS. Composed of insulating materials such as cellulose (cell walls) and lipophilic coatings (cuticular layer), charge build up can affect measurement quality. Using an electron gun during analysis can alleviate the charging effect and …
A New Tool for Quantum Device Fabrication
July 10th 2018 — A new single ion implantation tool is launched at the UK National Ion Beam Centre. Part of a 3 year project between Ionoptika and the University of Surrey and funded by the EPSRC, the new instrument will enable researchers to create new …
The 7th Chinese National Conference on Secondary Ion Mass Spectrometry (SIMS-China VII)
Ionoptika are delighted to announce we are sponsoring the 7th Chinese National Conference on Secondary Ion Mass Spectrometry (SIMS-China VII), which will be held from 9-12th October, 2018, at the Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences in Suzhou, China. The …
ToF SIMS of Rough or Uneven Samples
A common problem faced by TOF SIMS analysis is loss of peak resolution and mass accuracy on samples with rough or uneven topography. The J105 SIMS does not suffer from these issues, experiencing no loss in mass accuracy across even the roughest of samples The …
Depth Profiling in ToF-SIMS with the J105 SIMS
Depth profiling is a powerful technique in surface analysis for examining interfaces and exploring the 3-dimensional structures of a material, to which SIMS is uniquely suited. Many modern instruments are equipped with a sputter Ion Beam in addition to their primary Analysis Beam for depth …
ToF-SIMS Analysis on Insulating Samples
Performing ToF-SIMS analysis on insulating samples can be particularly challenging. Surface charge can impact the accuracy of the results, or in the worst cases prevent any results being obtained. Thanks to its unique ToF design, the J105 SIMS is capable of imaging highly insulating samples …
