Applications
Ion
Implantation
APPLICATIONS
Ion implantation is a process whereby dopant ions are accelerated in intense electrical fields to penetrate a material’s surface, thereby changing its properties.
Ion implantation is an essential technique in the semiconductor industry as it is used to modify a semiconductor’s conductivity during the fabrication of integrated circuits. It is also heavily used for fabricating silicon-on-insulator devices.
Emerging applications for ion implantation, such as quantum technology and nanotechnology, require much more extreme tolerances than traditional applications. Ionoptika’s Q-One is the world’s first instrument for the deterministic implantation of single ions with nanometre accuracy.
Explore our applications and products suitable for ion implantation below.
Coincident secondary electron and on-chip signals resulting from implanting single ions into a FET device.
Ionoptika 2020 https://ionoptika.com/wp-content/uploads/2020/10/Red-Window.jpg 801 1200 webmaster https://ionoptika.com/wp-content/uploads/2018/06/IO_logo_black_700x322.png webmaster2022-10-06 11:21:332022-12-05 16:04:41What is Ion Implantation?
https://ionoptika.com/wp-content/uploads/2018/03/ion-beams-banner-906x415-1.jpg 415 906 webmaster https://ionoptika.com/wp-content/uploads/2018/06/IO_logo_black_700x322.png webmaster2022-05-19 13:31:132022-12-05 16:18:52Ion Beams and their Applications
Ionoptika https://ionoptika.com/wp-content/uploads/2020/10/coloured-details-2_2.jpg 410 615 webmaster https://ionoptika.com/wp-content/uploads/2018/06/IO_logo_black_700x322.png webmaster2021-09-14 15:25:432022-12-05 16:02:45New funding boosts the UK’s future in Quantum manufacturing
https://ionoptika.com/wp-content/uploads/2018/07/simple_blog_post.jpg 688 1500 webmaster https://ionoptika.com/wp-content/uploads/2018/06/IO_logo_black_700x322.png webmaster2018-07-18 15:53:062022-12-05 16:14:58A New Tool for Quantum Device Fabrication
A focused ion beam platform for advanced device fabrication featuring deterministic single ion detection with up to 98% detection efficiency.
A low-power, high-brightness plasma FIB system. The source produces high beam currents up to 200 nA and can run Ar, Xe, N2, or O2.
A 25 kV liquid metal ion source focused ion beam. The IOG 25 provides a wide current range with spot sizes down to 100 nm.
| Q-One | Single Ion Implantation of Bismuth | N Cassidy, P Blenkinsopp, I Brown, RJ Curry, BN Murdin, R Webb, D Cox | Physica Status Solidi A | 2020 | Ion Implantation, Quantum Computing, Qubits, Q-One |
| Q-One | Investigating the formation of isotopically pure layers for quantum computers using ion implantation and layer exchange | J England, D Cox, N Cassidy, B Mirkhaydarov, A Perez-Fadon | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2019 | Ion Implantation, Quantum Computing, Qubits |